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Ordering number : ENN8234
CPH5811
CPH5811
Features
*
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
DC / DC Converter Applications
Composite type with an N-Channel Sillicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 1.8V driver [SBD] * Short reverse recovery time. * Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 10 3 12 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : QM
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TB-00001212 No.8234-1/6
CPH5811
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Therminal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0.8mm) 15 0.30 0.35 42 15 110 0.35 0.40 500 V V V A pF ns C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 0.4 3.36 5.6 48 58 72 280 60 38 13 35 35 25 8.8 0.85 0.85 0.82 1.2 63 82 100 20 1 10 1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2171A
0.4 5 4 3 0.15
Electrical Connection
5 4 3
1.6
2.8
0.05
0.2
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
1 2
0.6
Top view
1 0.95 2.9
2
0.6
0.7
0.9
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.2
No.8234-2/6
CPH5811
Switching Time Test Circuit
[MOSFET]
VIN 4V 0V VIN ID=1.5A RL=6.67 50 10s --5V trr CPH5811 P.G 50 100 10 VDD=10V
trr Test Circuit
[SBD]
Duty10%
100mA
D
PW=10s D.C.1%
VOUT
G
S
3.0
ID -- VDS
10.0V 4.0V 2.5 V
1.8V
[MOSFET]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID -- VGS
VDS=10V
100mA
[MOSFET]
2.5
Drain Current, ID -- A
1.5
V
2.0
1.5
VGS=1.0V
Drain Current, ID -- A
0.5
Ta= 7
5C
1.0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
160
Drain-to-Source Voltage, VDS -- V IT03490 [MOSFET] RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
140
IT03491 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT03492
120
100
1.0A 1.5A ID=0.5A
80
60
V =1.8 , VGS 0.5A V I D= =2.5 , VGS 1.0A 4.0V I D= V GS= 1.5A, I D=
40
20 0 --60
--40
--20
0
20
40
60
25
C --25C
80
100
120
10mA
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
IT03493
No.8234-3/6
CPH5811
3
yfs -- ID
VDS=10V
[MOSFET]
Forward Transfer Admittance, yfs -- S
2 10 7 5 3 2 1.0 7 5 3 2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IF -- VSD
[MOSFET] VGS=0
C 25
= Ta
--2
C 5
C 75
Forward Current, IF -- A
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
3 2
5 7 10 IT03494
0.01 0.2
0.3
0.4
0.5
Ta= 75 C 25 C --25 C
0.6 0.7 0.8
0.9
1.0
1.1
1.2
SW Time -- ID
[MOSFET] VDD=10V VGS=4V
Ciss, Coss, Crss -- pF
1000 7 5 3 2
Diode Forward Voltage, VSD -- V IT03495 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2 1.0 0.1 2
td(off)
tr
Ciss
tf
td(on)
100 7 5 3
Coss
Crss
10 2 3 5 7 1.0 2 3 5
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8
10 IT03496 3 2 10 7 5
7
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
[MOSFET]
Drain-to-Source Voltage, VDS -- V IT03497 ASO [MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=3A
Drain Current, ID -- A
IDP=12A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
ID=3A
DC
10
<10s 10 0 s 1m s 10 ms
op
0m
era
s
tio
n
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT09177
9
10
0.01 0.01
Total Gate Charge, Qg -- nC
1.0
IT03498
PD -- Ta
M ou
Drain-to-Source Voltage, VDS -- V
[MOSFET]
Allowable Power Dissipation, PD -- W
0.9 0.8
nt
ed
on
ac
0.6
er
am
ic
bo
ar
d
0.4
(6
00
m
m2 ! 0.
0.2
8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT09178
No.8234-4/6
CPH5811
3 2 1.0
IF -- VF
[SBD]
Reverse Current, IR -- mA
Forward Current, IF -- A
7 5 3
=1 Ta
C 25
C 25
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5
IR -- VR
Ta=125C
100C
[SBD]
75C
10 0
2 0.1
C
50 C
50C
25C
5 3 2 0.01 0 0.1
0.2
75 C
0.3
7
0.4
0.5 IT00622
10
15 IT00623
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
1000 7 5
Average Forward Power Dissipation, PF(AV) -- W
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
PF(AV) -- IO
[SBD]
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
1.4
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
(1) (3) (2) (4) Rectangular wave
360
3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 2 IT00625
Sine wave
180 360 0.2 0.4 0.6 0.8 1.0 1.2
10
Average Forward Current, IO -- A
12
IT00624
Reverse Voltage, VR -- V
IFSM -- t
Is 20ms t
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
6
4
2
0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
IT00626
No.8234-5/6
CPH5811
Note on usage : Since the CPH5811 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice.
PS No.8234-6/6

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